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| NTZD3152P Small Signal MOSFET -20 V, -430 mA, Dual P-Channel with ESD Protection, SOT-563 Features http://onsemi.com V(BR)DSS -20 V RDS(on) Typ 0.5 W @ -4.5 V 0.6 W @ -2.5 V 1.0 W @ -1.8 V D1 D2 -430 mA ID Max * * * * * * * * * Low RDS(on) Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb-Free Devices Applications Load/Power Switches Power Supply Converter Circuits Battery Management Cell Phones, Digital Cameras, PDAs, Pagers, etc. G1 G2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25C TA = 85C Symbol VDSS VGS ID PD Value -20 6.0 -430 -310 250 -455 -328 280 -750 -55 to 150 -350 260 mW mA C mA C D2 mW mA Unit V V mA 6 S1 P-Channel MOSFET S2 MARKING DIAGRAM TU M G G 1 SOT-563-6 CASE 463A 1 Steady State TA = 25C TA = 85C TU = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) tv5s ID PD IDM TJ, TSTG IS TL PINOUT: SOT-563 S1 1 6 D1 tv5s tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) G1 2 5 G2 3 Top View 4 S2 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v 5 s (Note 1) Symbol RqJA Max 500 447 Unit C/W ORDERING INFORMATION Device NTZD3152PT1G NTZD3152PT1H NTZD3152PT5G NTZD3152PT5H Package SOT-563 (Pb-Free) SOT-563 (Pb-Free) Shipping 4000 / Tape & Reel 8000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in. sq. [1 oz.] including traces). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2010 March, 2010 - Rev. 2 1 Publication Order Number: NTZD3152P/D NTZD3152P ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted.) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = -4.5 V, ID = -430 mA VGS = -2.5 V, ID = -300 mA VGS = -1.8 V, ID = -150 mA Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = -350 mA TJ = 25C -0.8 13 -1.2 V ns td(on) tr td(off) tf VGS = -4.5 V, VDD = -10 V, ID = -215 mA, RG = 10 W 10 12 35 19 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = -4.5 V, VDS = -10 V, ID = -215 mA VGS = 0 V, f = 1.0 MHz, VDS = -16 V 105 15 10 1.7 0.1 0.3 0.4 175 30 20 2.5 nC pF gFS VDS = -10 V, ID = -430 mA VGS = 0 V VDS = -16 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS = VDS, ID = -250 mA -0.45 -1.9 0.5 0.6 1.0 1.0 0.9 1.2 2.0 S -1.0 V mV/C W TJ = 25C TJ = 125C VGS = 0 V, ID = -250 mA -20 18 -1.0 -2.0 "2.0 mA V mV/C mA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = "4.5 V VGS = 0 V, dISD/dt = 100 A/ms, IS = -350 mA 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTZD3152P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1 -ID, DRAIN CURRENT (AMPS) 0.8 0.6 -1.4 V 0.4 -1.2 V 0.2 -1 V 0 0 1 2 3 4 5 6 7 8 9 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = -2 V VGS = -1.8 V TJ = 25C -1.6 V -ID, DRAIN CURRENT (AMPS) 1 VDS -10 V 0.8 0.6 0.4 0.2 0 0 TJ = -55C 25C 100C 0.5 1 1.5 2 2.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.8 0.75 0.7 0.65 0.6 0.55 0.5 0.45 0.4 1 3 5 2 4 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6 ID = -0.43 A TJ = 25C 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.1 0.2 Figure 2. Transfer Characteristics TJ = 25C VGS = -1.8 V VGS = -2.5 V 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1 0.8 0.6 -50 10 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage ID = -0.43 A VGS = -4.5 V VGS = 0 V -IDSS, LEAKAGE (nA) TJ = 150C 1000 100 TJ = 100C -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTZD3152P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 250 200 150 100 COSS 50 0 CRSS CISS 5 4 3 2 QGS 1 0 QGD ID = -0.215 A TJ = 25C 0 0.2 1.2 1.4 1.6 0.4 0.6 0.8 1 QG, TOTAL GATE CHARGE (nC) 1.8 2 10 9 -VGS 8 7 6 5 4 3 2 1 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = 0 V TJ = 25C QT -VDS C, CAPACITANCE (pF) 0 5 10 15 20 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 0.6 -IS, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 25C 0.4 100 td(off) t, TIME (ns) tf 10 tr td(on) 0.2 1 1 10 VDD = -10 V ID = -0.215 A VGS = -4.5 V 100 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTZD3152P PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 D -X- 6 5 4 A L 1 2 3 E -Y- b HE e 5 6 PL M C XY 0.08 (0.003) SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTZD3152P/D |
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